Work

Thermally stimulated depolarization in hafnium oxide: experiment and numerical simulation

Year: 2026

Type: preprint

Abstract: This paper presents an experimental and theoretical study of thermally stimulated depolarization (TSD) in hafnium oxide. Three different models for the probability of trap ionization are considered: the Frenkel effect and two variants of the multiphonon trap ionization mechanism, the multiphonon ionization mechanism of isolated traps at low trap concentrations and phonon-assisted tunneling between neighboring traps at high trap concentrations. The best agreement between the TSD experiment and theory is observed for the multiphonon ionization mechanism of isolated traps. Similar thermal energies of electron and hole traps in HfO2 are obtained ~ 1.3 eV.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2609.15036

Authors: Novikov, Yu. N., Temnov, D. E., Volgina, E. A., Lebedev, M. S., Gritsenko, V. A.

Institutions: Herzen University, Institute of Semiconductor Physics, Novosibirsk State Technical University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Russian Science Foundation

Awards: G2308335906, G7116638684, G8382677291

OpenAlex ID: W7213288840

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