Work

Investigations of Depth Profile of Native Oxide Layers Covering GaAs Implanted with Noble Gas by Rutherford Backscattering Spectroscopy with Nuclear Reaction

Year: 2026

Type: article

Source: Physics of Particles and Nuclei Letters

DOI: 10.1134/s1547477126700664

Authors: B. T. Hoa, M. Kulik, A. S. Doroshkevich, N. T. Bao My, T. T. Phuong, N. T. T. Trang, P. M. Duc, P. L. Tuan

Institutions: Vietnam National University, Hanoi, Joint Institute for Nuclear Research, VNU University of Science, Maria Curie-Skłodowska University, Institute for Nuclear Science and Technology, Vietnam Atomic Energy Instiute

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7213972729

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Cites: 7

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