Work

Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes

Year: 2026

Type: preprint

Abstract: Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to infinity depending on placement of the plane. Case studies analyzed in this work demonstrate better agreement with experimental data from GaN-based p-i-n diodes.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2609.22727

Authors: Celupica-Liu, Iris, Tak, Tanay, Wu, Yuh-Renn, Speck, James S.

Institutions: University of California, Santa Barbara, National Taiwan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: U.S. Department of Defense, U.S. Department of Education, National Science and Technology Council, National Defense Science and Engineering Graduate, Office of Naval Research

Awards: G2465863988, G6781789372

OpenAlex ID: W7214017381

Cites: 18

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Related to: 10