Work

Bipolar conductivity AlN with ultra-low contact resistance

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0339393

Authors: Habib Ahmad, Sangho Lee, Minwoo Cho, Christopher M. Matthews, Sana Nasir, Emily N. Marshall, Paul Stephen Hutchinson Maltaghati, Amin M. Finan, Alan Ponce de Leon Corona, Paul Douglas Yoder, W. Alan Doolittle

Institution: Georgia Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Sciences Office, DARPA, U.S. Naval Research Laboratory, Air Force Office of Scientific Research

Awards: G1910146261, G7180752447, G9000373540, G9000375107, G9000376327

OpenAlex ID: W7214074229

FWCI:

Cites: 51

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