Work

Gradient-engineered O2c oxygen vacancies as the core mechanism driven resistive switching behavior in Ta2O5-based memristors for neuromorphic applications

Year: 2026

Type: article

Source: Chemical Engineering Journal

DOI: 10.1016/j.cej.2026.182448

Authors: Mengna Wang, Kun Wang, Bo Yang, Chuncai Kong, Qi Chen, Zelin Cao, Kaikai Gao, Junchao Zhang, Hui Ma, Haoyuan Wang, Xiaoliang Chen, Xiangming Li, Jian Lv, Sihai Luo, Bai Sun, Jinyou Shao

Institution: Xi'an Jiaotong University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Xi'an Jiaotong University, National Natural Science Foundation of China, Key Science and Technology Program of Shaanxi Province

Awards: G1711278439, G2660293928, G296607794, G5124136969, G8620905901

OpenAlex ID: W7214533354

FWCI:

Cites: 34

Cited by:

Related to: