Work

Laser-assisted p-PANI/n-CdS/p-Si dual-heterojunction architecture for UV/Vis/NIR wavelength detection

Year: 2026

Type: article

Abstract: ≈ 1. The dual-heterostructure demonstrated a rapid switching profile, with rise/fall times of 79/88 ms and 82/87 ms, respectively; the operational durability of the intended device revealed outstanding performance, retaining 93.7% and 87% for p-PANI/n-CdS and n-CdS/p-Si, respectively, over four weeks. The synergistic operation of the dual-heterostructure enables effective carrier separation and wavelength selection in the UV, Vis, and NIR regions, allowing an effective workflow for emerging high-performance multi-wavelength photo-detection based on hybrid organic/inorganic semiconductor design.

Source: Nanoscale Advances

DOI: 10.1039/d6na00662k

Authors: Shahad Raji, Ethar Yahya Salih, Asaad A. H. AlZubaidi, Mohammed Haider Sami

Institution: Al-Bayan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

OpenAlex ID: W7214628194

FWCI:

Cites: 35

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Related to: 10