Work

Compact analytical–numerical drift-region design rules for quasi-vertical GaN trench MOSFETs

Year: 2026

Type: article

Abstract: A compact analytical–numerical framework is developed for drift-region design in quasi-vertical gallium nitride (GaN) trench metal–oxide–semiconductor field-effect transistors. The forward model combines finite-thickness electrostatics, an equivalent fixed-charge correction, GaN avalanche ionization, and trench-to-drift current spreading. Four fixed-thickness structures first verify the field regime, breakdown voltage, and specific on-resistance against two-dimensional technology computer-aided design (TCAD), with maximum deviations of 1.42% for breakdown voltage and 2.7% for specific on-resistance. The model is then embedded in an inverse search that selects the drift doping and thickness maximizing the Baliga figure of merit within a nominal ± 5 % voltage window. A subsequent same-structure robustness check over 37 unique TCAD cases spanning 772–2639 V gives mean absolute percentage errors of 4.1% for breakdown voltage and 6.6% for specific on-resistance. The optimized trajectory is reduced to compact power-law expressions with maximum fitting errors below 4.6%. These platform-specific relations provide a traceable first-pass design tool before multidimensional TCAD refinement and fabrication.

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aead16