Year: 2026
Type: article
Abstract: ABSTRACT In this work, we report the fabrication and characterisation of an InGaAs/InP double heterojunction bipolar transistor (DHBT) on an indium phosphide‐on‐silicon (InPoSi) substrate. The device exhibits a DC current gain of 65. Dynamic measurements performed on a submicron 0.35 × 3 µm 2 device further confirm its high‑frequency capability, with a current‑gain cutoff frequency ( f T ) of 200 GHz and a maximum oscillation frequency ( f max ) of 90 GHz, indicating its suitability for high‑frequency applications and the strong potential of the InPoSi platform for high‑performance bipolar technologies. Thermal resistance ( R TH ) was extracted for a device with an area of 0.5 × 10 µm 2 , yielding a value of 5867 K/W, which is approximately 2.5 times higher than that of a standard DHBT on its own InP substrate with the same topology. This result provides important insight into the thermal management challenges associated with InPoSi‐based DHBTs.
Source: Electronics Letters
DOI: 10.1049/ell2.70730
Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée, STMicroelectronics (France), Soitec (France)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,590
Funder: Agence Nationale de la Recherche
OpenAlex ID: W7214704144