Year: 2026
Type: article
Abstract: The defect chemistry and charge transport properties of Ge–Sb–Bi–Te layered solid solutions were systematically investigated using Hall-effect and electrical transport measurements. The influence of compositional deviations from stoichiometry and cation redistribution on the Hall carrier concentration and electrical conductivity was analyzed. All investigated compositions exhibited highly conductive p-type behavior with hole concentrations of the order of 10 20 cm −3 . The experimental results showed that variations in Ge, Sb, Bi, and Te contents produce non-monotonic changes in the Hall carrier concentration and electrical conductivity, indicating the combined contribution of different intrinsic defect configurations to the observed charge-transport behavior. Changes in the cation composition and deviations from the nominal Te content modify the concentration and distribution of electrically active defects and consequently affect the charge transport properties. Temperature-dependent measurements revealed an increasing contribution of thermally generated carriers at approximately 650–700 K, accompanied by a more pronounced decrease in the Hall coefficient and changes in the electrical resistivity. The combined Hall-effect and resistivity results indicate that charge transport is governed by the interplay between defect-controlled carrier generation and temperature-dependent carrier-scattering processes. These findings provide insight into the relationship between intrinsic point defects, carrier concentration, and electrical transport in Ge–Sb–Bi–Te layered solid solutions and may contribute to the development of defect-engineering strategies for optimizing their electrical properties.
Source: Journal of Solid State Chemistry
Authors: Sh.H. Mammadov, G.R. Gurbanov, Y.M. Naghiyev
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,540
OpenAlex ID: W7214723329