Year: 2026
Type: article
Abstract: In the Al₁₋ₓSb alloy, the melting point drops linearly as the Al concentration rises. Designing quantum materials with specialized thermal conductivity requires this thermal tunability. This regulates qubit behaviour in different temperature environments. Epitaxial growth of hetero structure and quantum dot layers with regulated temperature and lattice expansion. As the Al concentration (X) rises in the ternary alloy Al₁₋ₓInₓSb, the data show a nearly linear drop in melting point. Because of its tunable electrical and thermal properties, the ternary III–V semiconductor alloy Al₁₋ₓInₓSb (where 0 ≤ x < 1) is receiving a lot of attention in the design of hardware for quantum computing. Indium doping (increasing x) improves qubit stability and scalability. InSb has a low bandgap (~0.17 eV), whereas AlSb has a broad bandgap (~1.6 eV). The bandgap narrows as the indium concentration (x) rises, enabling low-energy spin qubits and heterostructures that can be adjusted for topological quantum computing. Application: Tunneling barriers in quantum dots and Josephson junctions can be precisely controlled thanks to band gap narrowing.
Author: ALLA SRIVANI .
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7214771053