Development of LGAD Sensor Technology on 12 inch Wafers for 3D Integration with advanced CMOS processes

Year: 2026

Type: preprint

Abstract: We report on the design, simulation, and initial testing of Low Gain Avalanche Diode (LGAD) sensors fabricated in 65 nm CMOS technology on 12 inch wafers. These sensors were developed as part of a project to demonstrate full wafer to wafer hybrid bonding of sensors and 28 nm Readout Integrated Circuits (ROICs). The sensor submission and test included standard (reach-through) LGADs, AC coupled LGADs, and Deep Junction LGADs as well as various test structures.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2609.35861

Authors: Lipton, Ron, Segal, Julie, Kok, Angela, England, Troy, Apresyan, Artur, Braga, Davide, Fahim, Farah, Wu, Shuoxing, Kenney, Christopher, Markovic, Bojan, Schwartzman, Ariel Gustavo, Rota, Lorenzo, Carpenter, Arthur

Institutions: Fermi National Accelerator Laboratory, SLAC National Accelerator Laboratory, Lawrence Livermore National Laboratory

Language: English

Topic: Particle Detector Development and Performance

Subfield: Nuclear and High Energy Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: U.S. Department of Energy, Office of Science, High Energy Physics, Lawrence Livermore National Laboratory, Fermilab, SLAC National Accelerator Laboratory

OpenAlex ID: W7214969281