Quantum Well Resonant Tunneling Diode Probe of Correlated States in Twisted Bilayer MoS$_2$
Year: 2026
Type: preprint
Abstract: Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape of $\approx 56.1^\circ$ twisted bilayer MoS$_2$ (tMoS$_2$). By measuring the differential conductance ($dI/dV_{\text{Probe}}$) as a function of filling factor $ν$ and displacement field $D$, we observe a robust integer insulating feature at $ν= 1$ that persists across the measured displacement field range. Furthermore, we identify a displacement-field-induced fractional insulating feature near $ν= 3/4$ for $D < -75$~mV/nm. Its temperature dependence is consistent with a generalized Wigner crystal interpretation, although the microscopic order remains to be established. These features are also observed in another device with a similar twist angle ($\approx 56.4^\circ$). Our results provide evidence of correlated states in near-AB-stacked tMoS$_2$ and establish QWRTD as a tool for investigating strong correlations in van der Waals heterostructures.
Source: arXiv (Cornell University)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7215087786