Work

Influence of Mg concentration in the AlGaN electron blocking layer on the temperature response of GaN-based near-UV laser diodes

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0005765

Authors: Jiankai Sun, Jing Yang, Yuheng Zhang, Yufei Hou, Zongshun Liu, Feng Liang, Degang Zhao

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences

Awards: G1397254847, G2340495322, G2448729015, G3036932515, G4487040938, G6030225121, G6778801559, G6949709843, G7575456791, G8002630593

OpenAlex ID: W7215726319

FWCI:

Cites: 45

Cited by:

Related to: