Work

InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices

Year: 2026

Type: article

Abstract: Semiconductor-superconductor hybrid materials form the basis of quantum devices ranging from gate-tunable qubit platforms to topological quantum applications. These applications require material combinations that offer strong spin-orbit coupling and a large superconducting gap. Here, we present a semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown Indium Arsenide Antimonide surface quantum well with an in-situ deposited Niobium layer. The Indium Arsenide Antimonide surface quantum well offers a low effective mass and strong spin-orbit interaction, while Niobium has high critical temperature and large critical magnetic field. The in-situ deposition results in a high-quality interface, enabling strong coupling to the quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID exhibits gate-tunable oscillations from both the junction and the SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for exploring gate-tunable superconductivity and topological superconducting devices.

Source: Communications Physics

DOI: 10.1038/s42005-026-02861-8