Year: 2026
Type: article
Abstract: ABSTRACT Quasi‐two‐dimensional (quasi‐2D) perovskites, featuring a large‐cation‐intercalated quantum‐well structure, are efficient emitters for pure‐red perovskite light‐emitting diodes (PeLEDs); however, their electroluminescence is limited by poor carrier injection because all current quasi‐2D emitters are horizontally aligned on low‐mobility organic electron transport layers. Therefore, a PeLED with a quasi‐2D perovskite vertically stacked on a high‐mobility inorganic electron‐transport layer is highly anticipated but has yet to be achieved. Here, we introduce branched guanidinium cations (GA + ) and non‐protonic phosphonium, (2‐aminoethyl) triphenyl‐ cations (PAT + ) to direct the vertical growth of quasi‐2D emitters on a high‐conductivity electron‐transport layer, ZnMgO, enabling high‐performance pure‐red PeLEDs that exhibit a maximum luminance of 65 875 cd m −2 and an external quantum efficiency of 14.63% even at a high brightness of 49 080 cd m −2 . Impressively, the low driving voltage, enabled by efficient carrier transport, also yields an operational half‐lifetime of 5528 h at an initial luminance of 100 cd m −2 , which represents the most stable pure‐red PeLED reported to date.
Source: Advanced Materials
DOI: 10.1002/adma.75251
Institution: University of Science and Technology of China
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Nanjing Tech University, University of Science and Technology of China, Natural Science Foundation of Anhui Province, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, Youth Innovation Promotion Association
OpenAlex ID: W7219697649
