Effect of K+ incorporation on the interlayer structure and electrochemical performance of Na2V6O16 cathodes for sodium-ion batteries
Year: 2026
Type: article
Abstract: The development of high-performance cathode materials remains a critical challenge for advancing sodium-ion battery (SIB) technology. Na 2 V 6 O 16 , a layered vanadate, is promising due to its large interlayer spacing but suffers from sluggish reaction kinetics and structural degradation during deep cycling. Herein, we propose a novel potassium-ion (K + ) doping strategy to simultaneously tailor the crystal structure and electronic properties of Na 2 V 6 O 16 . A series of K + -doped K x Na 2 V 6-x O 16 (x=0, 0.8, 1.0, 1.2) nanowires were synthesized via a facile one-pot hydrothermal method. Comprehensive characterization reveals that the incorporation of larger K + ions (1.38 Å) significantly expands the interlayer spacing and induces a partial reduction of V 5+ to V 4+ to maintain charge balance, thereby enhancing both Na + diffusion and electronic conductivity.Electrochemical tests demonstrate that the optimal KNa 2 V 5 O 16 cathode exhibits a reversible capacity of approximately 180 mAhg -1 at 0.1 C, outstanding rate capability (120 mAhg -1 at 5 C, corresponding to a capacity retention of 60% relative to 0.1 C), and exceptional long-term cycling stability with continuous capacity growth from approximately 180 to 210mAhg -1 during 700 cycles at 2 C (an increase of 18%).The continuous capacity growth may possibly be attributed to multiple synergistic factors, including progressive electrode wetting, SEI film evolution, and microstructural reconstruction of the active material, rather than solely to intrinsic activation. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) analyses confirm a substantial reduction in charge-transfer resistance and enhanced interfacial charge-transfer kinetics upon K + doping. This work demonstrates that rational doping with larger alkali metal ions is an effective strategy to unlock the full potential of vanadium-based oxides for SIBs.
Institution: Jiamusi University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,670
Award: G9001169333
OpenAlex ID: W7220865861
