Graphene-enabled interface engineering for bias-tunable UV-visible photodetection in an InGaN/Cs 3 Cu 2 I 5 heterojunction
Year: 2026
Type: article
Abstract: The InGaN/Cs 3 Cu 2 I 5 heterojunction shows great potential for UV-visible photodetection due to the superior optoelectronic properties of both materials. However, its performance is limited by poor crystallinity of Cs 3 Cu 2 I 5 and inefficient interfacial carrier transport. To address these issues, we introduce a graphene (Gr) interlayer and construct an InGaN/Gr/Cs 3 Cu 2 I 5 heterojunction photodetector via thermal evaporation. The device exhibits a dark current of 2.2 × 10 −8 A and a maximum responsivity of 0.57 A/W at -2 V under 405 nm illumination and with rise/fall times of 240.2/256.5 μs, respectively. Bias-tunable UV-visible photoresponse and successful detection of 405 nm OOK-modulated signals are further demonstrated. These findings establish Gr interface engineering as an effective strategy for simultaneously improving halide-film growth and heterointerfacial carrier transport.
Source: Optics Express
DOI: 10.1364/oe.616097
Authors: Jixing Chai, Yangpu Liu, Wenliang Wang, Guoqiang Li
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W7220958690
