Work

Epitaxial growth of WO3 on r-plane sapphire by hot-filament metal-oxide deposition using CO2 as a precursor

Year: 2026

Type: preprint

Abstract: The deposition of epitaxial films of WO3 by hot-filament metal-oxide deposition using CO2 as a precursor was demonstrated. The films were obtained at a low growth rate of 0.25 nm/min. The optical properties of the film were assessed by variable-angle spectroscopic ellipsometry, indicating transparency across the visible spectrum and high absorption above 3 eV.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.2610.11654

Authors: Souqui, Laurent, Adams, Lewis J., Tsampanakis, Andreas, Maibach, David Rehnlund, Eklund, Per

Institution: Uppsala University

Language: English

Topic: Transition Metal Oxide Nanomaterials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Energimyndigheten

Awards: G4196344163, G621120346, G6233967162, Tailored thermal and electrical properties of multicomponent Mgm+1(An)m thin films for energy harvesting

OpenAlex ID: W7221066734

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