Work

Decoupled Channel and Contact Modulation in α-In2Se3/ZrO2/Hf0.5Zr0.5O2 Dual-Ferroelectric Field-Effect Transistor

Year: 2026

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.6c13869

Authors: Jee Hwan Lee, Jung Um Park, Won Woo Lee, Whan Kyun Kim, Do Kyeong Yun, Minh Chien Nguyen, Yoon Seon An, Huamin Li, Woo Jong Yu

Institutions: Samsung (South Korea), Samsung Electronics (South Korea), Sungkyunkwan University, University at Buffalo, State University of New York

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Korea Research Institute of Chemical Technology

OpenAlex ID: W7221455652

FWCI:

Cites: 40

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