Study on the effect of nitriding gas on the direct nitridation of silicon swarf from the photovoltaic industry for synthesizing silicon nitride
Year: 2026
Type: article
Abstract: In the process of diamond wire cutting silicon wafers in the photovoltaic industry, tens of thousands of tons of high-purity silicon swarf are generated. There is an urgent need for the recycling and utilization of silicon swarf. Current research lacks systematic studies on the phase and morphology of silicon swarf under different nitriding atmospheres. In this paper, based on the analysis of the basic physical and chemical properties of silicon swarf, direct nitridation of silicon swarf was carried out to prepare Si3N4, and the influence of different gases (N2, N2/H2 (95:5), NH3) on the phase and morphology of nitriding products was investigated. The reaction heat and the gas-phase reaction between SiO and nitriding gas are the two main influencing factors. The reaction heat accumulation will increase the content of β-Si3N4, which mainly occurs in N2. The gas-phase reaction between SiO and nitriding gas is prone to form α-Si3N4 whiskers, and NH3 gas is beneficial for this gas-phase reaction. The above two conclusions have been proven through thermodynamic and kinetic calculations. This study has certain guiding significance for the direct nitridation of silicon swarf to prepare Si3N4 powders with different phases and morphologies.
Authors: Yu Lan, Yuchao Fu, Liekai Liu, Jiafeng Wei, Ruilin Zhang, Xuefeng Xia, Fang Xu, Xiaohua Ding, Yang Zhang
Language: English
Subfield: Ceramics and Composites
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,134
OpenAlex ID: W7221506874