Work

Evolution mechanism of damage locations in drift region of SiC MOSFETs under heavy ion irradiation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0323691

Authors: Xiaoping Dong, Mingmin Huang, Yichu Qin, Yao Ma, Zhimei Yang, Yun Li, Min Gong

Institutions: Sichuan University, Chengdu University of Information Technology, Chengdu University of Technology, Chengdu University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7221518458

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Cites: 32

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