Work

Physical insight into the n-channel Mobility in 4H-SiC MOSFETs with different post-oxidation annealing steps based on experiment

Year: 2026

Type: article

Source: Apollo (University of Cambridge)

DOI: 10.17863/cam.135739

Authors: Wang, Qian, Donato, Nazareno, Udrea, Florin

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: UK Research and Innovation, Engineering and Physical Sciences Research Council, Japan Science and Technology Agency, Advanced Low Carbon Technology Research and Development Program

Award: G9000361290

OpenAlex ID: W7221697836

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