"Body Diode Induced Threshold Voltage Degradation in SiC MOSFETs: Converter-Level Investigation, Effect Decoupling, and Device-Le"
Year: 2026
Type: dataset
Abstract: "This paper proposes a new unified physical explanation for body diode induced threshold voltage (Vth) degradation in SiC MOSFETs and demonstrates a device-level suppression approach. A complete H-bridge converter reveals that the negative component associated with body diode operation can be compensated by positive gate-bias-induced drift, concealing degradation behind a nearly unchanged Vth. Body diode and Schottky barrier diode (SBD)-assisted configurations exhibit a Vth shift differential of \u221292.9 mV after 12000 s under accelerated gate bias. For the first time, the conduction and reverse recovery effects on body diode induced Vth degradation are experimentally decoupled through combined H-bridge, Buck, and constant-current investigations. Steady conduction independently produces a substantial negative shift, while repeated reverse recovery further enhances the degradation. Cell-level simulations identify a common origin: hole injection during conduction and hole extraction during reverse recovery both involve current transport near the gate-oxide interface, promoting hole trapping under negative gate bias. Guided by this finding, a split-gate MOSFET with a source-connected P+ buffer (SG-PB-MOS) redirects hole current and suppresses both effects. The results establish freewheeling path, dead time, switching frequency, and device structure as coordinated design choices for long-term Vth reliability."
Source: IEEE DataPort
DOI: 10.21227/10rd-0z74
Author: Yuzhi Chen
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7221752044