Sub-Micron Gate $β-Ga_{2}O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $10^{9}$
Year: 2026
Type: preprint
Abstract: In this work, we demonstrate submicron-gate $β-Ga_{2}O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 100 nm-wide fins to improve electrostatic control of a high sheet charge density channel of $3.3\times 10^{13}$ cm-2. A 150 nm-gate-length FinFET exhibits a maximum drain current density of 764 mA/mm at VGS = 1 V and VDS = 10 V, an on-resistance of 9.1 $Ω$.mm, and an Ion/Ioff ratio exceeding $10^9$. The device also shows a peak transconductance of 43 mS/mm and de-embedded $f_{T}/f_{MAX}$ values of 6.3/2.0 GHz. Pulsed I-V measurements indicate ~20 % current collapse, attributed primarily to trapping at etched fin sidewalls and the $Al_{2} O_{3}$/ $β-Ga_{2}O_{3}$ interface. These results show that delta-doped $β-Ga_{2}O_{3}$ FinFETs can simultaneously achieve high drive current, strong current modulation, and GHz-frequency operation, providing a scalable device platform for future power and RF electronics.
Source: arXiv (Cornell University)
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: Collaborative Research: Radiation-Tolerant and Thermally Managed High-Voltage Gallium Oxide Power Diodes for High-Power Space Electronics, G1775508934, G2152459410, G2264530986, G3045592441, G4506991473, G471177627, NNCI: Nanotechnology Collaborative Infrastructure Southwest (NCI-SW), G5572033680, G6023903066, Design and Engineering of High Aspect Ratio Beta-Ga2O3 FinFETs using MOCVD Based In situ Ga Etching, G897031372
OpenAlex ID: W7221782547