Work

Temperature-Dependent Electrical and Interfacial Properties of LaB6/H-Terminated Diamond Schottky Barrier Diodes

Year: 2026

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782626601858

Authors: Xufang Zhang, Shihao Lu, Mingkun Li, Wei Wang, Shichao Wang, Zejing Han, Yongjie Li, Zhiwei Jiao, Jing Zhang

Institutions: North China University of Technology, Ministry of Education, Xi'an Jiaotong University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7221857296

FWCI:

Cites: 39

Cited by:

Related to: