Work

Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6c15029

Authors: Hyojin Yang, Hwan Jin Kim, Haneul Lee, Dae Hwan Kim, Sung-Jin Choi, Dong Myong Kim, Yoon Jung Lee, Min-Kyu Park, Sung Yun Woo, Haesung Kim, Jong-Ho Bae

Institutions: Yonsei University, Kookmin University, Purdue University West Lafayette, Gachon University, Kyungpook National University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, IC Design Education Center

Awards: G8432621913, G907031473

OpenAlex ID: W7221880666

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Cites: 36

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