Work

Controllable Topological Domain Arrays in Periodically Wrinkle‐Patterned Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Year: 2026

Type: article

Abstract: ABSTRACT Ferroelectric topological domain textures hold promise as key building blocks for next‐generation nanoelectronic devices. However, the scalable fabrication and deterministic control of ordered domain states remain challenging. In this work, we achieve the controlled creation of ordered center‐type topological domain configurations in periodically wrinkle‐patterned Pb(Zr 0.2 ,Ti 0.8 )O 3 (PZT) thin films and demonstrate their reversible manipulation using mechanical force and electric field, respectively. We further identify high‐conduction channels confined to the topological cores of these center‐type domain states. By applying a localized mechanical stress via an atomic force microscope (AFM) tip, a reversible transformation from an initial center‐convergent to a center‐divergent topological state is realized. This domain state transition is attributed to the flexoelectric effect, which modulates both the local depolarization field and the distribution of screening charges. Moreover, the center‐divergent state can be switched back to the convergent state by applying an electric field. These findings establish a pathway toward multifield control of polar topologies, offering a promising route for the development of emerging functional devices based on topological domain textures.

Source: Information & Functional Materials

DOI: 10.1002/ifm2.70030