Work

Analytical Investigation of Polarization-Enhanced Transport in ScAlN/GaN HEMTs

Year: 2026

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782626601731

Authors: Kavita Thorat Upadhyay, Poonam Lilhare, Arvind Upadhyay, Nitin K. Jain, Manju K. Chattopadhyay

Institutions: IPS Academy, Devi Ahilya Vishwavidyalaya

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7222203933

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Cites: 25

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