Work

High current density ultrawide-bandgap AlGaN pn diodes with dopant-free distributed polarization-doped junction regions

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0344413

Authors: Shivali Agrawal, Debaditya Bhattacharya, Naomi Pieczulewski, Hsin-Wei S. Huang, Madhav Ramesh, Vladimir Protasenko, David Anthony Muller, Huili Grace Xing, Debdeep Jena

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Cornell Center for Materials Research, National Nanotechnology Coordinating Office, Defense Sciences Office, DARPA, National Science Foundation Graduate Research Fellowship Program

Awards: G1759717020, G587686252, G948181897

OpenAlex ID: W7222266237

FWCI:

Cites: 37

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