Suppression of short channel effects by the LDD structure in 4H-SiC n-MOSFETs up to 500 ℃ environments
Year: 2026
Type: article
Abstract: Silicon carbide (SiC) is a wide bandgap semiconductor and is promising candidate material for application in harsh environment due to its excellent properties. However, SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been suffered by high traps density in the channel, which lowers current density. Scaling down the channel length is one of common ways to enhance the current. However, in such short channel MOSFETs, threshold voltage is lowered and off-state leakage current increases. In this work, to suppress such short-channel effects under high-temperature conditions, 4H-SiC MOSFETs with a lightly doped drain (LDD) structure were proposed, and electrical characteristics were investigated from room temperature to 500 °C. LDD structure can effectively suppress short channel effects even in as high as 300 °C. Moreover, The off-state leakage current was sufficiently suppressed in the MOSFET with LDD structure even at 500 °C.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7222378177