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AlN/AlGaN heterostructure field-effect transistor power devices advantageous for high-temperature application

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0344498

Authors: Rongjun Zhang, Sirui Feng, Yanqiu Wang, Maojin Yang, Xiaoping Wang, Haolin Hu, Yuan Yang, Yuxi Wan, Aimin Song, Bo Shen, Dao Hua Zhang

Institutions: University Town of Shenzhen, Xi'an University of Technology, Southern University of Science and Technology, Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7222987956

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Cites: 23

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