Year: 2026
Type: preprint
Abstract: Sidewall morphology is a potentially important factor influencing superconducting qubit performance, yet its quantitative characterization remains challenging due to the absence of standardized measurement protocols. In this work, we develop a scanning probe microscopy-based measurement framework for the quantitative characterization of superconducting qubit sidewalls. The framework introduces a refined root mean square lateral sidewall roughness descriptor and a new curvature-equivalent radius for quantifying vertical sidewall morphology. The descriptors and measurement procedures are applied to different components of qubit devices, forming the basis of a proposed sidewall characterization protocol. This provides a foundation for quantitative comparisons of fabrication processes across laboratories, enabling future investigations of correlations between sidewall geometry and qubit performance.
Source: arXiv (Cornell University)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7223044363