Year: 2026
Type: preprint
Abstract: Utility-scale quantum technologies will not only require a well-performing quantum platform, but also classical control hardware that is scalable, efficient, and meets the design requirements set by the quantum system of interest. One approach is the application of silicon CMOS technology, a highly scalable and mature technology, to design application-specific integrated circuits (ASIC) that are optimized for the quantum system. In this work, we present two-qubit control of electron and nuclear spins in NV centres in diamond, using a cryogenic CMOS qubit controller integrated with a diamond quantum device in a cryostat. Using Gate Set Tomography (GST) we characterize the performance of the single-qubit gates on both electron- and carbon nuclear spins, and analyze the limiting noise processes. We use dynamical decoupling to engineer a two-qubit gate, and estimate $F_\text{2q,avg} = 95(2)\%$ for the electron-nuclear two-qubit gate fidelity. Our demonstration of cryo-CMOS-driven two-qubit gates is a key step towards highly-integrated quantum devices based on colour centres.
Source: arXiv (Cornell University)
Institutions: QuTech, Delft University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G1693287877, G7392226337, G7422664581
OpenAlex ID: W7223069017