Year: 2026
Type: article
Abstract: In this paper, a reliability based comparative analysis between conventional double gate inversion mode (DG IM) and junctionless (DG JL) MOSFET has been presented using the Silvaco TCAD. By altering the gate workfunction, the devices are tuned to have the same threshold voltage for fair comparison. Later on, the interface trap charges are included at the oxide/silicon channel interface and the reliability of both devices is assessed by calculating the shift in the threshold voltage brought up by the applied gate voltage stress and sweeping the voltage from 0 to 2 V and then 2 to 0 V. Apart from this, the change in the trans conductance ( g m ), drain conductance ( g d ) and device gain ( g m / g d ) has also been computed by applying the gate and drain voltage stress. According to the computed results, the DG JL MOSFET shows a substantially lesser variation in the calculated V TH after changing the trap density and energy (during forward gate voltage sweep) than the DG IM MOSFET. Additionally, the impact of varying parameters such as temperature, oxide thickness, channel doping, trap density, and its location (energy level) on the shift in the device parameters has been determined. The research also calculates and presents the impact of bias stress on the device breakdown voltage.
Source: Engineering Research Express
Institutions: University of Delhi, Deen Dayal Upadhyaya College
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7223403706