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Strain-engineered step-flow growth of highly conductive n-AlGaN with Al content over 80% at low temperature by MOCVD

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0353345

Authors: Ziyue Qin, Ke Jiang, Bingxiang Wang, Chunyue Zhang, Shanli Zhang, Zhiming Shi, Shunpeng Lv, Yuping Jia, Mingrui Liu, Xiaojuan Sun, Dabing Li

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences

OpenAlex ID: W7223706495

FWCI:

Cites: 58

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