Work

Low-Loss Superjunction SiC MOSFET with Improved Breakdown Voltage and Reverse-Recovery Performance

Year: 2026

Type: article

Abstract: Conventional silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistors (MOSFETs) still face challenges such as high body diode forward voltage, and difficulty in balancing static and dynamic performance. To address these issues, a novel split-gate multi-channel superjunction SiC MOSFET with an integrated metal-oxide-semiconductor-channel diode, named as MSM-MOS, is proposed. The electrical characteristics of the proposed device are investigated using technology computer-aided design simulations and compared with those of a conventional trench MOSFET and a superjunction MOSFET with an integrated Schottky barrier diode.The MSM-MOS achieves a breakdown voltage of 2037 V and a specific on-resistance of 0.70 mΩ•cm 2 , showing improved drain-to-source blocking capability in the off-state and on-state conduction performance. In reverse conduction, the MSM-MOS shows a forward voltage of 1.77 V and a low reverse-recovery charge. Consequently, the MSM-MOS achieves the highest Baliga figure of merit of 5.92 GW/cm 2 and the lowest dynamic figure of merit of 32.9 mΩ•nC among the three device structures.

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aeba0c

Authors: Xiangqi Hong, Xun Li

Institution: Hebei University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: National Natural Science Foundation of China

Award: HEMT中掺C半绝缘GaN缓冲层的制备及掺杂机制的研究