Work

Direct Synthesis of Ag−In−Zn−S Quantum Dot Inks for Solution-Processed Optoelectronics

Year: 2026

Type: article

Abstract: Non-toxic I−III−VI quantum dots (QDs) hold strong potential for optoelectronics but are hindered by complex synthesis and post-processing requirements. Here, we demonstrate a direct synthesis of Zn-alloyed AgIn5S8 (AIZS) QDs that produces high-quality inks in N,N-dimethylformamide (DMF). The colloidal stability originates from a solvation layer comprising mainly surface-bound oxygen-coordinated In−DMF complexes. The resulting QDs exhibit strong n-type character and photoluminescence quantum yield (PLQY) of ca. 43%. Proof-of-concept quantum dot light-emitting diodes (QDLEDs) were fabricated based on this material, demonstrating the feasibility of processing functional emitting layers directly from polar inks.

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.6c03690

Authors: Apostolos Kalafatis, Spyros Orfanoudakis, Kostas Karaslanidis, Polychronis Tsipas, Alexandros Banis, Thomas Stergiopoulos

Institutions: National and Kapodistrian University of Athens, National Centre of Scientific Research "Demokritos", National Technical University of Athens

Language: English

Topic: Quantum Dots Synthesis And Properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funder: Hellenic Foundation for Research and Innovation