Construction of an S-Scheme g-C3N4/In2S3 Heterojunction with a Boosted Interfacial Electric Field for Highly Efficient Photocatalytic Cr(VI) Reduction under Simulated Sunlight Irradiation
Year: 2026
Type: article
Source: Langmuir
Institution: Huzhou Normal University
Language: English
Field: Energy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7224103729
