Work

Analysis of Si/SiGe Intermixing Layer Thickness by Inductively Coupled Plasma – Mass Spectrometry

Year: 2026

Type: article

Abstract: A new method for characterizing the intermixing layer between epitaxially deposited Si and SiGe based on the atomic scale wet etch combined with Inductively Coupled Plasma – Mass Spectrometry (ICP-MS). The thermally induced Ge and Si interdiffusion is considered as one of the root causes for the poor process control and undesired cavity profile after etch, which, in turn, may significantly impact the device performance. The developed ICP-MS method allows us to analyze the thickness of the Si/SiGe intermixing layer and the Ge concentration profile, which can help to improve the upstream processes.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-gnpev2