Work

Wet Process Development for Novel n-Type Dipole Materials ZrOx and YOx

Year: 2026

Type: article

Abstract: We report on wet processing techniques developed for two novel n-type dipole materials, ZrO x and YO x . Through etching evaluations, H₂SO₄ and CO₂ water were identified as effective and selective etchants for ZrO x and YO x , respectively. The etching rate was sufficiently low (0.1 - 0.3 nm/min), enabling precise thickness control required for dipole tuning. Electrical characterization using MOS capacitors confirmed that these wet processes successfully removed dipole materials, recovering effective work function (EWF). These results demonstrate the feasibility of wet patterning for dipole-first integration and provide a foundation for scalable, thermally efficient multi-V t device fabrication.

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/p-58eh1i