Work

Miniaturized Low‐Loss Diplexer Based on Modified Topology Using Si‐Based IPD Technology

Year: 2026

Type: article

Abstract: ABSTRACT In this letter, a miniaturized low‐loss diplexer based on a modified topology and implemented in silicon‐based integrated passive device (IPD) technology is proposed. The modified topology consists of a low‐pass channel and a band‐pass channel. By analyzing the transmission zero generation mechanisms in both passbands, high frequency selectivity is achieved. To verify the proposed design, a prototype with dimensions of 1.6 × 0.8 × 0.25 mm is fabricated using silicon‐based IPD technology. Measured results demonstrate that the proposed diplexer exhibits an insertion loss less than 0.6 dB and isolation better than 20 dB in the 0.66–0.94 GHz band, while achieving an insertion loss less than 0.7 dB and isolation better than 16 dB in the 1.69–2.73 GHz band. Compared with previously reported diplexer designs, the proposed work achieves favorable performance in terms of miniaturization and insertion loss.

Source: Microwave and Optical Technology Letters

DOI: 10.1002/mop.70863

Authors: Zhi Xu, Qi Zhang, Yifeng Cheng, Gaofeng Wang

Institution: Hangzhou Dianzi University

Language: English

Topic: Microwave Engineering and Waveguides

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: bronze

Funder: National Natural Science Foundation of China