Work

Preserved p-type performance of MoTe2 transistors via TeO2 dielectric buffer

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0356398

Authors: Fuyuan Zhang, Yuhan Zhu, Yujia Yan, Yuchen Cai, Xueying Zhan, Kai Xu, Zhenxing Wang, Jun He, Feng Wang

Institutions: National Center for Nanoscience and Technology, University of Chinese Academy of Sciences, Zhejiang University, Wuhan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China

OpenAlex ID: W7225122863

FWCI:

Cites: 38

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