Work

Mechanism of low-stress and high-density SiO2 dielectric film deposition in TEOS/O2 PECVD: A multiscale simulation study

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0354715

Authors: Yongkun Wang, Ding Xia, Wenlong Song, ZhiZhuo Huang, Ruoshi Zhang, XiaoXu Yang

Institution: Xidian University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Shaanxi Province

OpenAlex ID: W7225200768

FWCI:

Cites: 48

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Related to: 10