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Bandgap engineering of CuGaS 2 –CuInS 2 heterostructures for efficient thin-film photovoltaics

Year: 2026
Type: article
Abstract: device. Electrochemical impedance spectroscopy showed a lower charge-transfer resistance of 14.22 Ω and a higher recombination resistance of 2919.9 Ω, while the maximum external quantum efficiency increased from approximately 79% to 86%. These findings demonstrate that heterostructure engineering provides a practical route for simultaneously tuning light absorption and interfacial carrier transport, offering broader potential for the development of efficient thin-film photovoltaic absorbers.
Source: RSC Advances
DOI: 10.1039/d6ra07913j
Authors: Mohamed Bouzidi, A. F. A. Kadir, Ali Mujtaba, Adnan Asghar, Ghada A. Alsawah, Sultan Albarakati, Ahmed F. Almutairi, Turki Alkathiri, Faisal Alresheedi
Institutions: University of Ha'il, Universiti Teknikal Malaysia Melaka, University of Lahore, Universiti Utara Malaysia, Princess Nourah bint Abdulrahman University, University of Jeddah, Taibah University, Al Baha University, Qassim University
Language: English
Open Access status: gold
Estimated APC paid: $1,042
OpenAlex ID: W7225307148
FWCI:
Cites: 52
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Related to: 10