Analog‐Tunable Nonvolatile Memristors with Self‐Compliance Behavior via a MoS x ‐Interlayer Strategy for Neuromorphic Recognition and Zero‐Trust Image Encryption
Year: 2026
Type: article
Source: Advanced Functional Materials
DOI: 10.1002/adfm.79481
Institution: Shaanxi University of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225310047
