Work

Orientation-Dependent Growth Behavior and Microdefect Evolution of GaN on AlN Templates

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.6c01151

Authors: Zhan Zhang, Qian Chen, Quan Xie, Qingquan Xiao, Tinghong Gao

Institution: Guizhou University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W7225319486

FWCI:

Cites: 61

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Related to: 10