Localized Trap-State Engineering of Subthreshold Swing in Amorphous In–Ga–O Thin-Film Transistors via Vertically Positioned Sn δ-Doping
Year: 2026
Type: article
Institution: Hanyang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225319860
