Work

Optical anisotropy of InAs quantum dots and quantum dashes on InP

Year: 2026

Type: article

Abstract: Elongated InAs quantum dashes on InP introduce polarization anisotropy that limits polarization-insensitive photonic devices. We evaluate InAs quantum dots grown using a GaAs insertion layer that suppresses dash formation. Room-temperature polarization-resolved photoluminescence shows that the degree of linear polarization (DoLP) decreases from 0.3227 ± 0.0052 for a dash-dominant reference to 0.0382 ± 0.0029 for a dot-dominant sample. Broad-area lasers fabricated from eight stacked dot layers show no statistically significant threshold-current dependence on cavity orientation over 600–1200 µm cavities. These results indicate optically near-isotropic InAs quantum dots on InP grown using the GaAs insertion layer.

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/aebf3f

Authors: Jinkwan Kwoen, Hiroki Inoue, Masahiro Kakuda, Atsushi Matsumoto, Naokatsu YAMAMOTO, Kouichi AKAHANE, Yasuhiko Arakawa

Institutions: National Institute of Information and Communications Technology, The University of Tokyo, Institute for Nano Quantum Information Electronics, The University of Tokyo

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: New Energy and Industrial Technology Development Organization, Japan Society for the Promotion of Science

OpenAlex ID: W7225384976

FWCI:

Cites: 1

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Related to: 10