Work

Physics-Based Gate Stack Optimisation of p-GaN/AlGaN/GaN HEMTs for Balanced Threshold Voltage and On-Resistance

Year: 2026

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aebef3

Authors: Nadim Ahmed, Chinmoy Ghorai

Institution: Jadavpur University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225392856

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