High-Reliability Ultrascaled IGZO FETs for Multibit 2T0C DRAM toward Monolithic 3D Integration of an AI Accelerator
Year: 2026
Type: article
Source: ACS Nano
Institution: Tsinghua University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225398919
